Quantum scaling in nano-transistors
| dc.creator | Wulf, U. | |
| dc.date | 2008-08-19 | |
| dc.date.accessioned | 2026-07-07T09:57:20Z | |
| dc.date.available | 2026-07-07T09:57:20Z | |
| dc.description | In our previous papers on ballistic quantum transport in nano-transistors [J. Appl. Phys. 98, 84308 (2005)] it was demonstrated that under certain conditions it is possible to reduce the three-dimensional transport problem to an effectively one-dimensional one. We show that such an effectively one-dimensional description can be cast in a scale-invariant form. We obtain dimensionless variables for the characteristic channel length $l$ and width of the transistor which determine the scale-invariant output characteristic. For $l \gtrsim 10$, in the strong barrier regime, the output characteristics are similar to that of a conventional MOSFET assuming an ideal form for $l \to \infty$. In the weak barrier regime, $l \lesssim 10$, strong source-drain currents lead to i-v characteristics that differ qualitatively from that of a conventional transistor. Comparing with experimental data we find qualitative agreement. | |
| dc.description | 7 pages, 3 figures | |
| dc.identifier | https://arxiv.org/abs/0808.2563 | |
| dc.identifier | http://arxiv.org/abs/0808.2563 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/167306 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Quantum scaling in nano-transistors | |
| dc.type | text |