Statistics of random voltage fluctuations and the low-density residual conductivity of graphene

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dc.creatorGalitski, Victor
dc.creatorAdam, Shaffique
dc.creatorSarma, S. Das
dc.date2007-02-05
dc.date2007-10-29
dc.date.accessioned2026-07-07T08:54:03Z
dc.date.available2026-07-07T08:54:03Z
dc.descriptionWe consider a graphene sheet in the vicinity of a substrate, which contains charged impurities. An analytic expression for the probability distribution function of voltage fluctuations due to the charged impurities is derived. The distribution function is shown to be non-Gaussian. The voltage fluctuations lead to the appearance of randomly distributed density inhomogeneities in the graphene plane. We argue that these disorder-induced density fluctuations produce a finite conductivity even at a zero gate voltage in accordance with recent experimental observations. We estimate the width of the minimal conductivity plateau and the typical size of the electron and hole puddles. The existence of inhomogeneous random puddles of electrons and holes should be a generic feature of all graphene layers at low gate voltages due to the invariable presence of charged impurities in the substrate.
dc.descriptionRevised version, accepted for publication in Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/cond-mat/0702117
dc.identifierhttp://arxiv.org/abs/cond-mat/0702117
dc.identifierPhys. Rev. B 76, 245405 (2007)
dc.identifierdoi:10.1103/PhysRevB.76.245405
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/145796
dc.subjectMesoscale and Nanoscale Physics
dc.titleStatistics of random voltage fluctuations and the low-density residual conductivity of graphene
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