Phosphorus donors in highly strained silicon

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dc.creatorHuebl, Hans
dc.creatorStegner, Andre R.
dc.creatorStutzmann, Martin
dc.creatorBrandt, Martin S.
dc.creatorVogg, Guenther
dc.creatorBensch, Frank
dc.creatorRauls, Eva
dc.creatorGerstmann, Uwe
dc.date2006-07-27
dc.date.accessioned2026-07-07T07:16:12Z
dc.date.available2026-07-07T07:16:12Z
dc.descriptionThe hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si$_{1-x}$Ge$_x$ substrates with $x\leq 0.3$ is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density functional theory (DFT) shows that the additional reduction is caused by the volume increase of the unit cell and a local relaxation of the Si ligands of the P donor.
dc.description12 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0607737
dc.identifierhttp://arxiv.org/abs/cond-mat/0607737
dc.identifierPhys. Rev. Lett. 97, 166402 (2006)
dc.identifierdoi:10.1103/PhysRevLett.97.166402
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/113502
dc.subjectMaterials Science
dc.titlePhosphorus donors in highly strained silicon
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