Phase-field-crystal modeling of the (2x1)-(1x1) phase-transitions of Si(001) and Ge(001) surfaces

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dc.creatorXu, Ye-Chuan
dc.creatorLiu, Bang-Gui
dc.date2008-11-10
dc.date.accessioned2026-07-07T12:20:12Z
dc.date.available2026-07-07T12:20:12Z
dc.descriptionWe propose a two-dimensional phase-field-crystal model for the (2$\times$1)-(1$\times$1) phase transitions of Si(001) and Ge(001) surfaces. The dimerization in the 2$\times$1 phase is described with a phase-field-crystal variable which is determined by solving an evolution equation derived from the free energy. Simulated periodic arrays of dimerization variable is consistent with scanning-tunnelling-microscopy images of the two dimerized surfaces. Calculated temperature dependence of the dimerization parameter indicates that normal dimers and broken ones coexist between the temperatures describing the charactristic temperature width of the phase-transition, $T_L$ and $T_H$, and a first-order phase transition takes place at a temperature between them. The dimerization over the whole temperature is determined. These results are in agreement with experiment. This phase-field-crystal approach is applicable to phase-transitions of other reconstructed surface phases, especially semiconductor $n\times$1 reconstructed surface phases.
dc.description10 pages with 4 figures included
dc.identifierhttps://arxiv.org/abs/0811.1475
dc.identifierhttp://arxiv.org/abs/0811.1475
dc.identifierJ. Phys. D 42, 035402 (2009)
dc.identifierdoi:10.1088/0022-3727/42/3/035402
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/213001
dc.subjectMaterials Science
dc.subjectStatistical Mechanics
dc.titlePhase-field-crystal modeling of the (2x1)-(1x1) phase-transitions of Si(001) and Ge(001) surfaces
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