Metallic Carbon Nanotubes as High-Current-Gain Transistors

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dc.creatorGreen, F.
dc.creatorNeilson, D.
dc.date2006-02-01
dc.date2006-07-04
dc.date.accessioned2026-07-07T07:01:26Z
dc.date.available2026-07-07T07:01:26Z
dc.descriptionLow-dimensional metallic transport is at the heart of modern high-performance transistors. While the best devices are currently based on III-V heterojunction quantum-well channels, we demonstrate that much greater performance gains reside in the unique properties of one-dimensional carbon nanotubes. Using recent experimental data, we show how the specific features of degenerate carrier kinetics in metallic nanotubes enable a novel class of quantum-confined signal detector whose current gain exceeds present transistor technology. We analyze the key interplay of degeneracy and scattering dynamics on the transconductance via a microscopically conserving quantum-kinetic description.
dc.descriptionpresentation streamlined figs revised
dc.identifierhttps://arxiv.org/abs/cond-mat/0602034
dc.identifierhttp://arxiv.org/abs/cond-mat/0602034
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/108270
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleMetallic Carbon Nanotubes as High-Current-Gain Transistors
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