Pt-based metallization of PMOS devices for the fabrication of monolithic semiconducting/YBa2Cu3O7-d superconducting devices on silicon

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dc.creatorHuot, Guillaume
dc.creatorMechin, Laurence
dc.creatorBloyet, Daniel
dc.date2003-05-21
dc.date.accessioned2026-07-07T05:49:13Z
dc.date.available2026-07-07T05:49:13Z
dc.descriptionMo, Pt, Pt/Mo and Pt/Ti thin films have been deposited onto Si and SiO2 substrates by RF sputtering and annealed in the YBa2Cu3O7-d growth conditions. The effect of annealing on the sheet resitance of unpatterned layers was measured. A Pt-based multilayered metallization for the PMOS devices was proposed and tested for the monolithic integration of PMOS devices and YBCO sensors on the same silicon substrate. The best results were obtained with a Pt/Ti/Mo-silicide structure showing (0.472 Ω_{\Box}) interconnect sheet resistivity and $ 2 \times 10^{-4} Ω\cdot cm^{2}$ specific contact resistivity after annealing for (60) minutes at (700^{\circ})C in (0.5) mbar O(_{2}) pressure.
dc.description6 pages, accepted for Microelectronic Engineering, elsevier
dc.identifierhttps://arxiv.org/abs/physics/0305096
dc.identifierhttp://arxiv.org/abs/physics/0305096
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/85319
dc.subjectInstrumentation and Detectors
dc.titlePt-based metallization of PMOS devices for the fabrication of monolithic semiconducting/YBa2Cu3O7-d superconducting devices on silicon
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