Negative Quantum Capacitance of Carbon Nanotube Field-Effect Transistors

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dc.creatorLatessa, L.
dc.creatorPecchia, A.
dc.creatorDi Carlo, A.
dc.creatorLugli, P.
dc.date2004-12-20
dc.date.accessioned2026-07-07T03:02:49Z
dc.date.available2026-07-07T03:02:49Z
dc.descriptionAtomistic density functional theory (DFT) calculations of the capacitance between a metallic cylindric gate and a carbon nanotube (CNT) are reported. Results stressing the predominant effect of quantum capacitance in limiting or even enhancing screening properties of the CNT are shown. Other contributions to the quantum capacitance beyond the electronic density of state (DOS) are pointed out. Negative values of the quantum capacitance are obtained for low-density systems, which correspondingly over-screen the gate field. This unconventional behavior of the quantum capacitance is related to the predominance of the exchange contribution in the total electronic energy of the CNT.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0412540
dc.identifierhttp://arxiv.org/abs/cond-mat/0412540
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25531
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleNegative Quantum Capacitance of Carbon Nanotube Field-Effect Transistors
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