Perspective of spintronics applications based on the Extraordinary Hall Effect

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dc.creatorGerber, A.
dc.creatorRiss, O.
dc.date2008-03-02
dc.date.accessioned2026-07-07T09:24:19Z
dc.date.available2026-07-07T09:24:19Z
dc.descriptionExtraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly selected spin-orbit scattering events. Already achieved sensitivity of the EHE-based sample devices exceeds 1000 Ohm/T, which surpasses the sensitivity of semiconducting Hall sensors. Linear field response, thermal stability, high frequency operation, sub-micron dimensions and, above all, simplicity, robustness and low cost manufacture are good reasons to consider a wide scale technological application of the phenomenon for magnetic sensors and memory devices.
dc.descriptionInvited paper to be published in Journal of Nanoelectronics and Optoelectronics (JNO)
dc.identifierhttps://arxiv.org/abs/0803.0124
dc.identifierhttp://arxiv.org/abs/0803.0124
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/156051
dc.subjectStrongly Correlated Electrons
dc.titlePerspective of spintronics applications based on the Extraordinary Hall Effect
dc.typetext

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