Spin orbit coupling in bulk ZnO and GaN

dc.creatorFu, J. Y.
dc.creatorWu, M. W.
dc.date2008-05-12
dc.date2008-09-20
dc.date.accessioned2026-07-07T10:17:35Z
dc.date.available2026-07-07T10:17:35Z
dc.descriptionUsing group theory and Kane-like $\mathbf{k\cdot p}$ model together with the Löwdining partition method, we derive the expressions of spin-orbit coupling of electrons and holes, including the linear-$k$ Rashba term due to the intrinsic structure inversion asymmetry and the cubic-$k$ Dresselhaus term due to the bulk inversion asymmetry in wurtzite semiconductors. The coefficients of the electron and hole Dresselhaus terms of ZnO and GaN in wurtzite structure and GaN in zinc-blende structure are calculated using the nearest-neighbor $sp^3$ and $sp^3s^\ast$ tight-binding models separately.
dc.description9 pages, 6 figures, to be published in J. Appl. Phys
dc.identifierhttps://arxiv.org/abs/0805.1577
dc.identifierhttp://arxiv.org/abs/0805.1577
dc.identifierJ. Appl. Phys. 104, 093712 (2008).
dc.identifierdoi:10.1063/1.3018600
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/173903
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleSpin orbit coupling in bulk ZnO and GaN
dc.typetext

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