Quantum resistance metrology in graphene

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dc.creatorGiesbers, A. J. M.
dc.creatorRietveld, G.
dc.creatorHoutzager, E.
dc.creatorZeitler, U.
dc.creatorYang, R.
dc.creatorNovoselov, K. S.
dc.creatorGeim, A. K.
dc.creatorMaan, J. C.
dc.date2008-10-22
dc.date.accessioned2026-07-07T12:09:57Z
dc.date.available2026-07-07T12:09:57Z
dc.descriptionWe have performed a metrological characterization of the quantum Hall resistance in a 1 $μ$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $ν=\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m$Ω$ upto 2 $μ$A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5$ μ$A current) equal to that in conventional semiconductors. The principal limitation of the present experiments are the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.
dc.identifierhttps://arxiv.org/abs/0810.4064
dc.identifierhttp://arxiv.org/abs/0810.4064
dc.identifierAppl. Phys. Lett. 93, 222109 (2008)
dc.identifierdoi:10.1063/1.3043426
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/209805
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleQuantum resistance metrology in graphene
dc.typetext

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