A solution in 3 dimensions for current in a semiconductor under high level injection from a point contact

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dc.creatorDenhoff, Mike W.
dc.date2008-03-25
dc.date.accessioned2026-07-07T09:28:19Z
dc.date.available2026-07-07T09:28:19Z
dc.descriptionThe standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements of a single point breakdown in an ultrathin dielectric. It was found that the minority carrier injection level was about 70%.
dc.description2 pages, 1 figure, 28th International Conference on the Physics of Semiconductors, Vienna, 24-28 July 2006
dc.identifierhttps://arxiv.org/abs/0803.3599
dc.identifierhttp://arxiv.org/abs/0803.3599
dc.identifierAIP Conference Proceedings Vol. 893, 2007
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/157414
dc.subjectOther Condensed Matter
dc.titleA solution in 3 dimensions for current in a semiconductor under high level injection from a point contact
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