Modeling of Nanoscale Devices
| dc.creator | Anantram, M. P. | |
| dc.creator | Lundstrom, M. S. | |
| dc.creator | Nikonov, D. E. | |
| dc.date | 2006-10-10 | |
| dc.date | 2007-02-20 | |
| dc.date.accessioned | 2026-07-07T07:47:25Z | |
| dc.date.available | 2026-07-07T07:47:25Z | |
| dc.description | We aim to provide engineers with an introduction to the non-equilibrium Green's function (NEGF) approach, which provides a powerful conceptual tool and a practical analysis method to treat small electronic devices quantum mechanically and atomistically. We first review the basis for the traditional, semiclassical description of carriers that has served device engineers for more than 50 years. We then describe why this traditional approach loses validity at the nanoscale. Next, we describe semiclassical ballistic transport and the Landauer-Buttiker approach to phase coherent quantum transport. Realistic devices include interactions that break quantum mechanical phase and also cause energy relaxation. As a result, transport in nanodevices are between diffusive and phase coherent. We introduce the non equilbrium Green's function (NEGF) approach, which can be used to model devices all the way from ballistic to diffusive limits. This is followed by a summary of equations that are used to model a large class of layered structures such as nanotransistors, carbon nanotubes and nanowires. An application of the NEGF method in the ballistic and scattering limits to silicon nanotransistors is discussed. | |
| dc.description | 42 pages, 23 figures, Matlab code in appendix; revised version with corrected references | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0610247 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0610247 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/124163 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.subject | Statistical Mechanics | |
| dc.title | Modeling of Nanoscale Devices | |
| dc.type | text |