THz parametric gain in semiconductor superlattices in the absence of electric domains

Simple item page
dc.creatorHyart, Timo
dc.creatorAlexeeva, Natalia V.
dc.creatorLeppanen, Ahti
dc.creatorAlekseev, Kirill N.
dc.date2006-08-31
dc.date.accessioned2026-07-07T07:19:54Z
dc.date.available2026-07-07T07:19:54Z
dc.descriptionWe theoretically show that conditions for THz gain and conditions for formation of destructive electric domains in semiconductor superlattices are fairly different in the case of parametric generation and amplification. Action of an unbiased high-frequency electric field on a superlattice causes a periodic variation of energy and effective mass of miniband electrons. This parametric effect can result in a significant gain at some even harmonic of the pump frequency without formation of electric domains and corruption from pump harmonics.
dc.description4 pages, 3 figures. Accepted to Appl. Phys. Lett
dc.identifierhttps://arxiv.org/abs/cond-mat/0608704
dc.identifierhttp://arxiv.org/abs/cond-mat/0608704
dc.identifierApplied Physics Letters 89, 132105 (2006)
dc.identifierdoi:10.1063/1.2357579
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/114798
dc.subjectMesoscale and Nanoscale Physics
dc.titleTHz parametric gain in semiconductor superlattices in the absence of electric domains
dc.typetext

Files

Collections

arXiv