A Modular High-Temperature Measurement Set-Up for Semiconductor Device Characterization

Simple item page
dc.creatorBorthen, P.
dc.creatorWachutka, G.
dc.date2008-01-07
dc.date.accessioned2026-07-07T08:53:01Z
dc.date.available2026-07-07T08:53:01Z
dc.descriptionWe demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room temperature up to 500 degrees C and higher. A detailed description of the experimental aquipment is given. Its practical use is demonstrated by measuring temperature-dependent charcteristics of silicon VDMOSFET and IGBT devices as well as SiC-diodes. For the silicon devices, numerical simulations based on recently developed high temperature physical models were also performed in order to gain a deeper understanding of the measured data, together with a revalidation of the model parameters.
dc.descriptionSubmitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)
dc.identifierhttps://arxiv.org/abs/0801.1038
dc.identifierhttp://arxiv.org/abs/0801.1038
dc.identifierDans 13th International Worshop on THERMal INvestigations of ICs and Systems - THERMINIC 2007, Budapest : Hongrie (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/145476
dc.subjectGeneral Physics
dc.titleA Modular High-Temperature Measurement Set-Up for Semiconductor Device Characterization
dc.typetext

Files

Collections

arXiv