Transport signatures of correlated disorder in a two-dimensional electron gas

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dc.creatorHeinzel, T.
dc.creatorJaeggi, R. D.
dc.creatorRibeiro, E.
dc.creatorWaldkirch, M. v.
dc.creatorEnsslin, K.
dc.creatorUlloa, S. E.
dc.creatorMedeiros-Ribeiro, G.
dc.creatorPetroff, P. M.
dc.date2001-10-18
dc.date.accessioned2026-07-07T02:43:11Z
dc.date.available2026-07-07T02:43:11Z
dc.descriptionWe report electronic transport measurements on two-dimensional electron gases in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled quantum dots. At high InAs dot densities, pronounced Altshuler-Aronov-Spivak magnetoresistance oscillations are observed, which indicate short-range ordering of the potential landscape formed by the charged dots and the strain fields. The presence of these oscillations coincides with the observation of a metal-insulator transition, and a maximum in the electron mobility as a function of the electron density. Within a model based on correlated disorder, we establish a relation between these effects.
dc.description5 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0110362
dc.identifierhttp://arxiv.org/abs/cond-mat/0110362
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18399
dc.subjectMesoscale and Nanoscale Physics
dc.titleTransport signatures of correlated disorder in a two-dimensional electron gas
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