Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations

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dc.creatorChantis, Athanasios N.
dc.creatorBelashchenko, Kirill D.
dc.creatorSmith, Darryl L.
dc.creatorTsymbal, Evgeny Y.
dc.creatorvan Schilfgaarde, Mark
dc.creatorAlbers, Robert C.
dc.date2007-07-24
dc.date.accessioned2026-07-07T08:41:39Z
dc.date.available2026-07-07T08:41:39Z
dc.descriptionA minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin density approximation we calculate spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of applied bias voltage. We find a change in sign of the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance. This result explains recent experimental data on spin injection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Fe magnetic tunnel junctions.
dc.identifierhttps://arxiv.org/abs/0707.3644
dc.identifierhttp://arxiv.org/abs/0707.3644
dc.identifierPhys. Rev. Lett. 99, 196603 (2007)
dc.identifierdoi:10.1103/PhysRevLett.99.196603
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/141743
dc.subjectMaterials Science
dc.titleReversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations
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