Defect-related photoluminescence of hexagonal boron nitride

Simple item page
dc.creatorMuseur, Luc
dc.creatorEduard, Feldbach
dc.creatorKanaev, A. V.
dc.date2008-10-22
dc.date.accessioned2026-07-07T10:12:24Z
dc.date.available2026-07-07T10:12:24Z
dc.descriptionPhotoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by means of time- and energy-resolved spectroscopy methods. The observed bands are related to DAP transitions, impurities and structural defects. The excitation of samples by high-energy photons above 5.4 eV enables a phenomenon of photostimulated luminescence (PSL), which is due to distantly trapped CB electrons and VB holes. These trapped charges are metastable and their reexcitation with low-energy photons results in anti-Stockes photoluminescence. The comparison of photoluminescence excitation spectra and PSL excitation spectra allows band analysis that supports the hypothesis of Frenkel-like exciton in hBN with a large binding energy.
dc.identifierhttps://arxiv.org/abs/0810.3989
dc.identifierhttp://arxiv.org/abs/0810.3989
dc.identifierPhysical Review B 78, 15 (2008) 155204
dc.identifierdoi:10.1103/PhysRevB.78.155204
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/172173
dc.subjectOptics
dc.subjectMaterials Science
dc.titleDefect-related photoluminescence of hexagonal boron nitride
dc.typetext

Files

Collections

arXiv