Carbon Based Resistive Memory

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dc.creatorKreupl, Franz
dc.creatorBruchhaus, Rainer
dc.creatorMajewski, Petra
dc.creatorPhilipp, Jan B.
dc.creatorSymanczyk, Ralf
dc.creatorHapp, Thomas
dc.creatorArndt, Christian
dc.creatorVogt, Mirko
dc.creatorZimmermann, Roy
dc.creatorBuerke, Axel
dc.creatorGraham, Andrew P.
dc.creatorKund, Michael
dc.date2009-01-28
dc.date.accessioned2026-07-07T12:35:11Z
dc.date.available2026-07-07T12:35:11Z
dc.descriptionWe propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as resistance-change material in high density non-volatile memories. Repetitive high-speed switching and the potential for multi-level programming have been successfully demonstrated.
dc.descriptionto be published in Digest of the International Electron Devices Meeting (IEDM) 2008, p. 521-524, 4 pages, 12 figures
dc.identifierhttps://arxiv.org/abs/0901.4439
dc.identifierhttp://arxiv.org/abs/0901.4439
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/217687
dc.subjectMaterials Science
dc.titleCarbon Based Resistive Memory
dc.typetext

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