Crossed Andreev reflection-induced magnetoresistance

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dc.creatorGiazotto, F.
dc.creatorTaddei, F.
dc.creatorFazio, R.
dc.creatorBeltram, F.
dc.date2005-12-05
dc.date2006-10-03
dc.date.accessioned2026-07-07T06:53:08Z
dc.date.available2026-07-07T06:53:08Z
dc.descriptionWe show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin-valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets the magnetoresistance can exceed -80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures.
dc.description5 pages, 4 figures, final published version
dc.identifierhttps://arxiv.org/abs/cond-mat/0512090
dc.identifierhttp://arxiv.org/abs/cond-mat/0512090
dc.identifierPhys. Rev. Lett. 97, 087001 (2006)
dc.identifierdoi:10.1103/PhysRevLett.97.087001
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/105484
dc.subjectMesoscale and Nanoscale Physics
dc.subjectSuperconductivity
dc.titleCrossed Andreev reflection-induced magnetoresistance
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