Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots

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dc.creatorSeguin, R.
dc.creatorSchliwa, A.
dc.creatorRodt, S.
dc.creatorPötschke, K.
dc.creatorPohl, U. W.
dc.creatorBimberg, D.
dc.date2006-10-16
dc.date.accessioned2026-07-07T07:27:32Z
dc.date.available2026-07-07T07:27:32Z
dc.descriptionA systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $μ$eV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k.p theory and the configuration interaction method were performed. Different sources for the fine-structure splitting are discussed, and piezoelectricity is pinpointed as the only effect reproducing the observed trend.
dc.description5 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0610436
dc.identifierhttp://arxiv.org/abs/cond-mat/0610436
dc.identifierPhys. Rev. Lett. 95, 257402 (2005)
dc.identifierdoi:10.1103/PhysRevLett.95.257402
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/117410
dc.subjectMaterials Science
dc.titleSize-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots
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