Electron-Phonon Interactions for Optical Phonon Modes in Few-Layer Graphene

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dc.creatorYan, Jia-An
dc.creatorRuan, W. Y.
dc.creatorChou, M. Y.
dc.date2009-01-20
dc.date.accessioned2026-07-07T12:58:04Z
dc.date.available2026-07-07T12:58:04Z
dc.descriptionWe present a first-principles study of the electron-phonon (e-ph) interactions and their contributions to the linewidths for the optical phonon modes at $Γ$ and K in one to three-layer graphene. It is found that due to the interlayer coupling and the stacking geometry, the high-frequency optical phonon modes in few-layer graphene couple with different valence and conduction bands, giving rise to different e-ph interaction strengths for these modes. Some of the multilayer optical modes derived from the $Γ$-$E_{2g}$ mode of monolayer graphene exhibit slightly higher frequencies and much reduced linewidths. In addition, the linewidths of K-$A'_1$ related modes in multilayers depend on the stacking pattern and decrease with increasing layer numbers.
dc.description6 pages,5 figures, submitted to PRB
dc.identifierhttps://arxiv.org/abs/0901.3086
dc.identifierhttp://arxiv.org/abs/0901.3086
dc.identifierPhys. Rev. B 79, 115443 (2009)
dc.identifierdoi:10.1103/PhysRevB.79.115443
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/225120
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleElectron-Phonon Interactions for Optical Phonon Modes in Few-Layer Graphene
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