Conductance modulation in spin field-efect transistors under finite bias voltages

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dc.creatorHu, Liangbin
dc.creatorGao, Ju
dc.creatorShen, Shun-Qing
dc.date2004-03-08
dc.date.accessioned2026-07-07T02:56:49Z
dc.date.available2026-07-07T02:56:49Z
dc.descriptionThe conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession states of injected spin-polarized electrons in the semiconductor channel of the device will depend not only the gate-voltage controlled Rashba spin-orbit coupling but also depend on the bias voltage and, hence, the conductance modulation in the device due to Rashba spin-orbit coupling may also depend sensitively on the bias voltage.
dc.description7 pages, 3 figures, to appear in Physical Review B, (April, 2004)
dc.identifierhttps://arxiv.org/abs/cond-mat/0403199
dc.identifierhttp://arxiv.org/abs/cond-mat/0403199
dc.identifierPhys. Rev. B 69, 165304 (2004)
dc.identifierdoi:10.1103/PhysRevB.69.165304
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23477
dc.subjectMesoscale and Nanoscale Physics
dc.titleConductance modulation in spin field-efect transistors under finite bias voltages
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