Cluster meanfield approximation for the optical response of weakly doped semiconductor quantum wells

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dc.creatorBronold, Franz X.
dc.date2002-09-02
dc.date2003-01-09
dc.date.accessioned2026-07-07T02:47:06Z
dc.date.available2026-07-07T02:47:06Z
dc.descriptionThe calculation of the optical properties of doped semiconductor quantum wells is an intricate many-body problem because of the dynamical response of the excess carriers to the photogenerated valence band hole. At low densities, however, where the main effect of the dynamical response is the formation of trions, a simple cluster meanfield approximation can be effectively employed to calculate the optical susceptibility.
dc.description8 pages, 3 figures, presented at NATO ARW "Optical properties of 2D systems with interacting electrons", 13-16 June 2002, Ioffe Institute, St. Petersburg, Russia, final version
dc.identifierhttps://arxiv.org/abs/cond-mat/0209042
dc.identifierhttp://arxiv.org/abs/cond-mat/0209042
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19880
dc.subjectStrongly Correlated Electrons
dc.titleCluster meanfield approximation for the optical response of weakly doped semiconductor quantum wells
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