Fully Band Resolved Scattering Rate in MgB2 Revealed by Nonlinear Hall Effect and Magnetoresistance Measurements

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dc.creatorYang, Huan
dc.creatorLiu, Yi
dc.creatorZhuang, Chenggang
dc.creatorShi, Junren
dc.creatorYao, Yugui
dc.creatorMassidda, Sandro
dc.creatorMonni, Marco
dc.creatorJia, Ying
dc.creatorXi, Xiaoxing
dc.creatorLi, Qi
dc.creatorLiu, Zi-Kui
dc.creatorFeng, Qingrong
dc.creatorWen, Hai-Hu
dc.date2008-02-23
dc.date2008-08-13
dc.date.accessioned2026-07-07T10:00:52Z
dc.date.available2026-07-07T10:00:52Z
dc.descriptionWe have measured the normal state temperature dependence of the Hall effect and magnetoresistance in epitaxial MgB2 thin films with variable disorders characterized by the residual resistance ratio RRR ranging from 4.0 to 33.3. A strong nonlinearity of the Hall effect and magnetoresistance have been found in clean samples, and they decrease gradually with the increase of disorders or temperature. By fitting the data to the theoretical model based on the Boltzmann equation and ab initio calculations for a four-band system, for the first time, we derived the scattering rates of these four bands at different temperatures and magnitude of disorders. Our method provides a unique way to derive these important parameters in multiband systems.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0802.3443
dc.identifierhttp://arxiv.org/abs/0802.3443
dc.identifierPhys. Rev. Lett. 101, 067001 (2008)
dc.identifierdoi:10.1103/PhysRevLett.101.067001
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/168453
dc.subjectSuperconductivity
dc.titleFully Band Resolved Scattering Rate in MgB2 Revealed by Nonlinear Hall Effect and Magnetoresistance Measurements
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