A new, enhanced diamond single photon emitter in the near infra-red

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dc.creatorAharonovich, Igor
dc.creatorZhou, Chunyuan
dc.creatorStacey, Alastair
dc.creatorOrwa, Julius
dc.creatorSimpson, David
dc.creatorGreentree, Andrew D.
dc.creatorTreussart, Francois
dc.creatorRoch, Jean Francois
dc.creatorPrawer, Steven
dc.date2009-02-18
dc.date.accessioned2026-07-07T12:43:28Z
dc.date.available2026-07-07T12:43:28Z
dc.descriptionIndividual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of a new color center which has photophysical properties surpassing those of the two main-stay centers, namely the nitrogen vacancy and NE8 centers. The new center is fabricated using focused ion beam implantation of nickel into isolated chemical vapor deposited diamond micro-crystals. Room temperature photoluminescence studies reveal a narrow emission in the near infrared region centered at 768 nm with a lifetime as short as 2 ns. Its focused ion beam compatibility opens the prospect to fabrication with nanometer resolution and realization of integrated quantum photonic devices. Preliminary investigations suggest that this center arises from an as-yet uncharacterized nickel-silicon complex.
dc.identifierhttps://arxiv.org/abs/0902.3051
dc.identifierhttp://arxiv.org/abs/0902.3051
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/220433
dc.subjectMaterials Science
dc.titleA new, enhanced diamond single photon emitter in the near infra-red
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