Electrically detected electron spin resonance in a high mobility silicon quantum well

Simple item page
dc.creatorMatsunami, Junya
dc.creatorOoya, Mitsuaki
dc.creatorOkamoto, Tohru
dc.date2005-12-02
dc.date2006-07-07
dc.date.accessioned2026-07-07T06:53:05Z
dc.date.available2026-07-07T06:53:05Z
dc.descriptionThe resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the spin polarization, not the effect of electron heating. The longitudinal spin relaxation time T_1 is obtained to be of the order of 1 ms in an in-plane magnetic field of 3.55 T. The suppression of the effect of the Rashba fields due to high-frequency spin precession explains the very long T_1.
dc.descriptionto be published in Phys. Rev. Lett
dc.identifierhttps://arxiv.org/abs/cond-mat/0512041
dc.identifierhttp://arxiv.org/abs/cond-mat/0512041
dc.identifierPhysical Review Letters 97, 066602 (2006).
dc.identifierdoi:10.1103/PhysRevLett.97.066602
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/105466
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleElectrically detected electron spin resonance in a high mobility silicon quantum well
dc.typetext

Files

Collections

arXiv