Reply to cond-mat/0111504

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dc.creatorBerciu, Mona
dc.creatorBhatt, R. N.
dc.date2001-12-10
dc.date.accessioned2026-07-07T02:43:47Z
dc.date.available2026-07-07T02:43:47Z
dc.descriptionWe show that the choice of the sign of the hopping matrix in our impurity band model for disordered III-V diluted magnetic semiconductors [PRL 87, 107293 (2000); cond-mat/0111045] is justified: with this choice, the impurity band is placed inside the gap and it has a mobility edge, as expected for a disordered system. The other sign choice, suggested in cond-mat/0111504, leads to an unphysical description of the occupied states of the impurity band (extremely long tail, no mobility edge, no bulk ferromagnetism).
dc.description1 page, 1 figure
dc.identifierhttps://arxiv.org/abs/cond-mat/0112165
dc.identifierhttp://arxiv.org/abs/cond-mat/0112165
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18641
dc.subjectMaterials Science
dc.subjectDisordered Systems and Neural Networks
dc.titleReply to cond-mat/0111504
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