Linear temperature dependence of conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition
| dc.creator | Lai, K. | |
| dc.creator | Pan, W. | |
| dc.creator | Tsui, D. C. | |
| dc.creator | Lyon, S. | |
| dc.creator | Muhlberger, M. | |
| dc.creator | Schaffler, F. | |
| dc.date | 2006-09-12 | |
| dc.date.accessioned | 2026-07-07T07:41:52Z | |
| dc.date.available | 2026-07-07T07:41:52Z | |
| dc.description | In a high mobility two-dimensional electron system in Si, near the critical density, $n_c=0.32\times10^{11}$cm$^{-2}$, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature ($T$) dependence around the Fermi temperature. When $σ_0$, the extrapolated T=0 conductivity from the linear T-dependence, is plotted as a function of density, two regimes with different $σ_0(n)$ relations are seen, suggestive of two different phases. Interestingly, a sharp transition between these two regimes coincides with $n_c$, and $σ_0$ of the transition is $\sim$ $e^2/h$, the quantum conductance, per square. Toward T=0, the data deviate from linear $σ(T)$ relation and we discuss the possible percolation type of transition in our Si sample. | |
| dc.description | 4 Revtex pages, 3 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0609301 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0609301 | |
| dc.identifier | Phys. Rev. B 75, 033314 (2007) | |
| dc.identifier | doi:10.1103/PhysRevB.75.033314 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/122275 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | Linear temperature dependence of conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition | |
| dc.type | text |