Superconductor-semiconductor magnetic microswitch

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dc.creatorCastellana, C.
dc.creatorGiazotto, F.
dc.creatorGovernale, M.
dc.creatorTaddei, F.
dc.creatorBeltram, F.
dc.date2005-08-01
dc.date2006-02-03
dc.date.accessioned2026-07-07T06:41:29Z
dc.date.available2026-07-07T06:41:29Z
dc.descriptionA hybrid superconductor--two-dimensional electron gas microdevice is presented. Its working principle is based on the suppression of Andreev reflection at the superconductor-semiconductor interface caused by a magnetic barrier generated by a ferromagnetic strip placed on top of the structure. Device switching is predicted with fields up to some mT and working frequencies of several GHz, making it promising for applications ranging from microswitches and storage cells to magnetic field discriminators.
dc.description4 pages, 3 figures, minor changes to text
dc.identifierhttps://arxiv.org/abs/cond-mat/0508058
dc.identifierhttp://arxiv.org/abs/cond-mat/0508058
dc.identifierAppl. Phys. Lett. 88, 052502 (2006)
dc.identifierdoi:10.1063/1.2172018
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/101684
dc.subjectMesoscale and Nanoscale Physics
dc.subjectSuperconductivity
dc.titleSuperconductor-semiconductor magnetic microswitch
dc.typetext

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