Small-angle impurity scattering and the spin Hall conductivity in 2D systems

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dc.creatorShytov, A. V.
dc.creatorMishchenko, E. G.
dc.creatorEngel, H. -A.
dc.creatorHalperin, B. I.
dc.date2005-09-27
dc.date2005-11-15
dc.date.accessioned2026-07-07T06:41:52Z
dc.date.available2026-07-07T06:41:52Z
dc.descriptionAn arbitrarily small concentration of impurities can affect the spin Hall conductivity in a two-dimensional semiconductor system. We develop a Boltzmann-like equation that can be used for impurity scattering with arbitrary angular dependence, and for arbitrary angular dependence of the spin-orbit field b(k) around the Fermi surface. For a model applicable to a 2D hole system in GaAs, if the impurity scattering is not isotropic, we find that the spin Hall conductivity depends on the derivative of b with respect to the energy and on deviations from a parabolic band structure, as well as on the angular dependence of the scattering. In principle, the resulting spin Hall conductivity can be larger or smaller than the ``intrinsic value'', and can have opposite sign. In the limit of small angle scattering, in a model appropriate for small hole concentrations, where the band is parabolic and b ~ k^3, the spin Hall conductivity has opposite sign from the intrinsic value, and has larger magnitude. Our analysis assumes that the spin-orbit splitting $b$ and the transport scattering rate tau^{-1} are both small compared to the Fermi energy, but the method is valid for for arbitrary value of b*tau.
dc.descriptionErrors corrected, references added
dc.identifierhttps://arxiv.org/abs/cond-mat/0509702
dc.identifierhttp://arxiv.org/abs/cond-mat/0509702
dc.identifierPhys. Rev. B 73, 075316 (2006)
dc.identifierdoi:10.1103/PhysRevB.73.075316
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/101831
dc.subjectMesoscale and Nanoscale Physics
dc.titleSmall-angle impurity scattering and the spin Hall conductivity in 2D systems
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