Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices

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dc.creatorAlekseev, Kirill N.
dc.creatorCannon, Ethan H.
dc.creatorKusmartsev, Feodor V.
dc.creatorCampbell, David K.
dc.date2001-03-29
dc.date2004-12-23
dc.date.accessioned2026-07-07T02:40:54Z
dc.date.available2026-07-07T02:40:54Z
dc.descriptionWe consider the spontaneous creation of a dc voltage across a strongly coupled semiconductor superlattice subjected to THz radiation. We show that the dc voltage may be approximately proportional either to an integer or to a half- integer multiple of the frequency of the applied ac field, depending on the ratio of the characteristic scattering rates of conducting electrons. For the case of an ac field frequency less than the characteristic scattering rates, we demonstrate the generation of an unquantized dc voltage.
dc.description6 pages, 3 figures, RevTEX, EPSF. Revised version v3: corrected typos
dc.identifierhttps://arxiv.org/abs/cond-mat/0103608
dc.identifierhttp://arxiv.org/abs/cond-mat/0103608
dc.identifierEurophysics Letters 56 (2001) 842; Erratum: 68 (2004) 753
dc.identifierdoi:10.1209/epl/i2001-00596-9
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17543
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStatistical Mechanics
dc.subjectChaotic Dynamics
dc.titleFractional and unquantized dc voltage generation in THz-driven semiconductor superlattices
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