First time calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions

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dc.creatorCristea, Miron J.
dc.date2006-09-01
dc.date2006-11-03
dc.date.accessioned2026-07-07T07:24:18Z
dc.date.available2026-07-07T07:24:18Z
dc.descriptionBased on semiconductor materials fundamental equations, the calculation of the depletion region width and barrier capacitance of practical diffused -Gaussian profile- semiconductor junctions was achieved for the first time in this work. The obtained formulas are valid for p-n junctions, Schottky junctions, hetero-junctions and other types of semiconductor junctions.
dc.description8 pages, 1 figure
dc.identifierhttps://arxiv.org/abs/math-ph/0609004
dc.identifierhttp://arxiv.org/abs/math-ph/0609004
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/116301
dc.subjectMathematical Physics
dc.subjectMaterials Science
dc.subject78A25
dc.titleFirst time calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions
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