Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films

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dc.creatorSun, Jie
dc.creatorSun, Yingchun
dc.date2007-01-19
dc.date.accessioned2026-07-07T07:42:03Z
dc.date.available2026-07-07T07:42:03Z
dc.descriptionThin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system pH value played an important role in this experiment. The growth rate is 12 nm/h at room temperature. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy, Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.
dc.descriptionA novel method for Al2O3 passivation on semiconductors
dc.identifierhttps://arxiv.org/abs/cond-mat/0701488
dc.identifierhttp://arxiv.org/abs/cond-mat/0701488
dc.identifierChinese Journal of Chemistry, 2004, 22, 661 667
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/122343
dc.subjectMaterials Science
dc.titleChemical Liquid Phase Deposition of Thin Aluminum Oxide Films
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