Scaling of level statistics at the metal-insulator transition

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dc.creatorZharekeshev, I. Kh.
dc.creatorKramer, B.
dc.date2001-12-10
dc.date.accessioned2026-07-07T02:43:47Z
dc.date.available2026-07-07T02:43:47Z
dc.descriptionUsing the Anderson model for disordered systems the fluctuations in electron spectra near the metal--insulator transition were numerically calculated for lattices of sizes up to 28 x 28 x 28 sites. The results show a finite--size scaling of both the level spacing distribution and the variance of number of states in a given energy interval, that allows to locate the critical point and to determine the critical exponent of the localization length.
dc.description6 pages, PDF, 6 fig, talk at the NATO Advanced Research Workshop on Submicron Quantum Dynamics, Trieste, Italy, June 1994
dc.identifierhttps://arxiv.org/abs/cond-mat/0112171
dc.identifierhttp://arxiv.org/abs/cond-mat/0112171
dc.identifierin "Quantum Dynamics in Submicron Structures", Ed. by H. Cerdeira et al (NATO ASI Series, North-Holland, Kluwer Academic Publishers) Ser. E, 291, 93 (1995)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18644
dc.subjectDisordered Systems and Neural Networks
dc.subjectMesoscale and Nanoscale Physics
dc.titleScaling of level statistics at the metal-insulator transition
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