Transport and drag in undoped electron-hole bilayers

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dc.creatorHwang, E. H.
dc.creatorSarma, S. Das
dc.date2008-04-21
dc.date.accessioned2026-07-07T10:02:39Z
dc.date.available2026-07-07T10:02:39Z
dc.descriptionWe investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well systems. Our results indicate that the background charged impurity scattering is the most dominant resistive scattering mechanism in the high-mobility bilyers. We also find that the drag transresistivity is significantly enhanced when the electron-hole layer separation is small due to the exchange induced renormalization of the single layer compressibility.
dc.description7 pages 3 figures
dc.identifierhttps://arxiv.org/abs/0804.3311
dc.identifierhttp://arxiv.org/abs/0804.3311
dc.identifierPhys. Rev. B 78, 075430 (2008)
dc.identifierdoi:10.1103/PhysRevB.78.075430
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/169050
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleTransport and drag in undoped electron-hole bilayers
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