DC Spin Current Generation in a Rashba-type Quantum Channel

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dc.creatorWang, L. Y.
dc.creatorTang, C. S.
dc.creatorChu, C. S.
dc.date2004-09-13
dc.date2004-09-23
dc.date.accessioned2026-07-07T06:26:38Z
dc.date.available2026-07-07T06:26:38Z
dc.descriptionWe propose and demonstrate theoretically that resonant inelastic scattering (RIS) can play an important role in dc spin current generation. The RIS makes it possible to generate dc spin current via a simple gate configuration: a single finger-gate that locates atop and orients transversely to a quantum channel in the presence of Rashba spin-orbit interaction. The ac biased finger-gate gives rise to a time-variation in the Rashba coupling parameter, which causes spin-resolved RIS, and subsequently contributes to the dc spin current. The spin current depends on both the static and the dynamic parts in the Rashba coupling parameter, $α_0$ and $α_1$, respectively, and is proportional to $α_0 α_1^2$. The proposed gate configuration has the added advantage that no dc charge current is generated. Our study also shows that the spin current generation can be enhanced significantly in a double finger-gate configuration.
dc.description4 pages,4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0409291
dc.identifierhttp://arxiv.org/abs/cond-mat/0409291
dc.identifierPhys. Rev. B 73, 085304 (2006) (5 pages)
dc.identifierdoi:10.1103/PhysRevB.73.085304
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/97166
dc.subjectMesoscale and Nanoscale Physics
dc.titleDC Spin Current Generation in a Rashba-type Quantum Channel
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