Quantum control of donor electrons at the Si-SiO2 interface

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dc.creatorCalderon, M. J.
dc.creatorKoiller, Belita
dc.creatorHu, Xuedong
dc.creatorSarma, S. Das
dc.date2005-08-26
dc.date2006-02-15
dc.date.accessioned2026-07-07T06:41:39Z
dc.date.available2026-07-07T06:41:39Z
dc.descriptionProspects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. In particular, we investigate the feasibility of shuttling donor-bound electrons between the impurity in the bulk and the Si-SiO2 interface by tuning an external electric field. We calculate the shuttling time to range from sub-picoseconds to nanoseconds depending on the distance (~ 10-50 nm) of the donor from the interface. Our results establish that quantum control in such nanostructure architectures could, in principle, be achieved.
dc.descriptionVersion accepted for publication in PRL
dc.identifierhttps://arxiv.org/abs/cond-mat/0508647
dc.identifierhttp://arxiv.org/abs/cond-mat/0508647
dc.identifierPhys. Rev. Lett. 96, 096802 (2006)
dc.identifierdoi:10.1103/PhysRevLett.96.096802
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/101744
dc.subjectMesoscale and Nanoscale Physics
dc.subjectQuantum Physics
dc.titleQuantum control of donor electrons at the Si-SiO2 interface
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