Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well

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dc.creatorLai, K.
dc.creatorPan, W.
dc.creatorTsui, D. C.
dc.creatorLyon, S. A.
dc.creatorMuhlberger, M.
dc.creatorSchaffler, F.
dc.date2005-01-21
dc.date2005-01-24
dc.date.accessioned2026-07-07T03:03:23Z
dc.date.available2026-07-07T03:03:23Z
dc.descriptionThe apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure with mobility μ=1.9 x 10^5 cm^2/Vs at density n=1.45 x 10^{11} cm^{-2}. The critical density, at which the thermal coefficient of low T resistivity changes sign, is ~ 0.32 x 10^{11} cm^{-2}, so far the lowest observed in the Si 2D systems. In-plane magnetoresistance study was carried out in the higher density range where the 2DES shows the metallic-like behavior. It is observed that the in-plane magnetoresistance first increases as ~ B_{ip}^2 and then saturates to a finite value ρ(B_c) for B_{ip} > B_c. The full spin-polarization field B_c decreases monotonically with n but appears to saturate to a finite value as n approaches zero. Furthermore, ρ(B_c)/ρ(0) ~ 1.8 for all the densities ranging from 0.35 x 10^{11} to 1.45 x 10^{11} cm^{-2} and, when plotted versus B_{ip}/B_c, collapses onto a single curve.
dc.identifierhttps://arxiv.org/abs/cond-mat/0501532
dc.identifierhttp://arxiv.org/abs/cond-mat/0501532
dc.identifierPhysical Review B 72, 081313 (R) 2005
dc.identifierdoi:10.1103/PhysRevB.72.081313
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25732
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleTwo-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
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