X-ray Irradiation-induced Carrier Doping Effects in Organic Dimer-Mott Insulators

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dc.creatorSasaki, T.
dc.creatorOizumi, H.
dc.creatorYoneyama, N.
dc.creatorKobayashi, N.
dc.creatorToyota, N.
dc.date2007-10-16
dc.date.accessioned2026-07-07T08:45:14Z
dc.date.available2026-07-07T08:45:14Z
dc.descriptionWe report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators $κ$-(ET)$_{2}$$X$ with $X =$ Cu[N(CN)$_{2}$]Cl and Cu$_{2}$(CN)$_{3}$. For $κ$-(ET)$_{2}$Cu[N(CN)$_{2}$]Cl, we have observed a large decrease of the resistivity by 40 % with the irradiation at 300 K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the half-filled dimer-Mott insulators.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0710.3005
dc.identifierhttp://arxiv.org/abs/0710.3005
dc.identifierJ. Phys. Soc. Jpn. 76, 123701 (2007)
dc.identifierdoi:10.1143/JPSJ.76.123701
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/142907
dc.subjectStrongly Correlated Electrons
dc.subjectSuperconductivity
dc.titleX-ray Irradiation-induced Carrier Doping Effects in Organic Dimer-Mott Insulators
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