Control of optical emission in doped GaAs/AlGaAs nanofabricated quantum dots

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dc.creatorKalliakos, Sokratis
dc.creatorGarcia, Cesar Pascual
dc.creatorPellegrini, Vittorio
dc.creatorZamfirescu, Marian
dc.creatorCavigli, Lucia
dc.creatorGurioli, Massimo
dc.creatorVinattieri, Anna
dc.creatorPinczuk, Aron
dc.creatorDennis, Brian S.
dc.creatorPfeiffer, Loren N.
dc.creatorWest, Ken W.
dc.date2007-03-02
dc.date.accessioned2026-07-07T07:49:50Z
dc.date.available2026-07-07T07:49:50Z
dc.descriptionDilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Excitonic-like and biexcitonic-like emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated QDs for applications in areas that require fine control of optical emission.
dc.description3 Figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0703059
dc.identifierhttp://arxiv.org/abs/cond-mat/0703059
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/124966
dc.subjectOther Condensed Matter
dc.titleControl of optical emission in doped GaAs/AlGaAs nanofabricated quantum dots
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