Second-harmonic interferometric spectroscopy of the buried Si(111)-SiO$_2$ interface

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dc.creatorFedyanin, A. A.
dc.creatorDolgova, T. V.
dc.creatorAktsipetrov, O. A.
dc.creatorSchuhmacher, D.
dc.creatorMarowsky, G.
dc.date2000-04-11
dc.date.accessioned2026-07-07T05:43:58Z
dc.date.available2026-07-07T05:43:58Z
dc.descriptionThe second-harmonic interferometric spectroscopy (SHIS) which combines both amplitude (intensity) and phase spectra of the second-harmonic (SH) radiation is proposed as a new spectroscopic technique being sensitive to the type of critical points (CP's) of combined density of states at semiconductor surfaces. The increased sensitivity of SHIS technique is demonstrated for the buried Si(111)-SiO$_2$ interface for SH photon energies from 3.6 eV to 5 eV and allows to separate the resonant contributions from $E^\prime_0/E_1$, $E_2$ and $E^\prime_1$ CP's of silicon.
dc.description9 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/physics/0004018
dc.identifierhttp://arxiv.org/abs/physics/0004018
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/83455
dc.subjectOptics
dc.titleSecond-harmonic interferometric spectroscopy of the buried Si(111)-SiO$_2$ interface
dc.typetext

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