Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system

Simple item page
dc.creatorChen, Kuang Yao
dc.creatorChang, Y. H.
dc.creatorLiang, C. -T.
dc.creatorAoki, N.
dc.creatorOchiai, Y.
dc.creatorHuang, C. F.
dc.creatorLin, Li-Hung
dc.creatorCheng, K. A.
dc.creatorCheng, H. H.
dc.creatorLin, H. H.
dc.creatorWu, Jau-Yang
dc.creatorLin, Sheng-Di
dc.date2008-02-11
dc.date.accessioned2026-07-07T09:47:47Z
dc.date.available2026-07-07T09:47:47Z
dc.descriptionMagneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magnetoresistivity oscillations due to Landau quantisation can be identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and transition point. Our study shows that the direct I-QH transition does not always correspond to the onset of strong localisation.
dc.description11 pages, 7 figures
dc.identifierhttps://arxiv.org/abs/0802.1378
dc.identifierhttp://arxiv.org/abs/0802.1378
dc.identifierJ. Phys.: Condens. Matter 20 (2008) 295223.
dc.identifierdoi:10.1088/0953-8984/20/29/295223
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/163972
dc.subjectMesoscale and Nanoscale Physics
dc.subjectDisordered Systems and Neural Networks
dc.titleProbing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system
dc.typetext

Files

Collections

arXiv