The self-compression of injected electron-hole plasma in silicon
| dc.creator | Altukhov, P. D. | |
| dc.creator | Kuzminov, E. G. | |
| dc.date | 2008-01-20 | |
| dc.date.accessioned | 2026-07-07T08:55:33Z | |
| dc.date.available | 2026-07-07T08:55:33Z | |
| dc.description | A recombination radiation line of electron-hole plasma, observed in electroluminescence spectra of tunneling silicon MOS diodes, has been investigated at the temperature > 300 K. The internal quantum efficiency of the luminescence, equal to 0.003, appears to be unexpectedly high. The spectral position of the luminescence line indicates, that a weak overheating of the diode by the diode current results in an anomalously strong reduction of the semiconductor energy gap inside the electron-hole plasma. A unique threshold optical hysteresis is observed in the luminescence intensity with changing diode current. These results are explained by condensation of injected electron-hole plasma into a dense state. A reduction of the semiconductor energy gap due to generation of phonons by the plasma is discussed as a reason of the plasma condensation. The plasma condensation is identified as the plasma self-compression. | |
| dc.description | 32 pages, 7 figures | |
| dc.identifier | https://arxiv.org/abs/0801.3057 | |
| dc.identifier | http://arxiv.org/abs/0801.3057 | |
| dc.identifier | Phys. Stat. Sol. (b) 232, # 2, 364-379 (2002) | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/146307 | |
| dc.subject | Other Condensed Matter | |
| dc.title | The self-compression of injected electron-hole plasma in silicon | |
| dc.type | text |