Ab initio Study of Misfit Dislocations at the SiC/Si(001) Interface

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dc.creatorCicero, Giancarlo
dc.creatorPizzagalli, Laurent
dc.creatorCatellani, Alessandra
dc.date2007-09-11
dc.date.accessioned2026-07-07T08:28:45Z
dc.date.available2026-07-07T08:28:45Z
dc.descriptionThe high lattice mismatched SiC/Si(001) interface was investigated by means of combined classical and ab initio molecular dynamics. Among the several configurations analyzed, a dislocation network pinned at the interface was found to be the most efficient mechanism for strain relief. A detailed description of the dislocation core is given, and the related electronic properties are discussed for the most stable geometry: we found interface states localized in the gap that may be a source of failure of electronic devices.
dc.identifierhttps://arxiv.org/abs/0709.1585
dc.identifierhttp://arxiv.org/abs/0709.1585
dc.identifierPhysical Review Letters 89, 15 (2002) 156101
dc.identifierdoi:10.1103/PhysRevLett.89.156101
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/137728
dc.subjectMaterials Science
dc.titleAb initio Study of Misfit Dislocations at the SiC/Si(001) Interface
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