Universal spin-Hall conductance fluctuations in two dimensions

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dc.creatorRen, Wei
dc.creatorQiao, Zhenhua
dc.creatorWang, Jian
dc.creatorSun, Qingfeng
dc.creatorGuo, Hong
dc.date2006-08-10
dc.date.accessioned2026-07-07T07:19:37Z
dc.date.available2026-07-07T07:19:37Z
dc.descriptionWe report a theoretical investigation on spin-Hall conductance fluctuation of disordered four terminal devices in the presence of Rashba or/and Dresselhaus spin-orbital interactions in two dimensions. As a function of disorder, the spin-Hall conductance $G_{sH}$ shows ballistic, diffusive and insulating transport regimes. For given spin-orbit interactions, a universal spin-Hall conductance fluctuation (USCF) is found in the diffusive regime. The value of the USCF depends on the spin-orbit coupling $t_{so}$, but is independent of other system parameters. It is also independent of whether Rashba or Dresselhaus or both spin-orbital interactions are present. When $t_{so}$ is comparable to the hopping energy $t$, the USCF is a universal number $\sim 0.18 e/4π$. The distribution of $G_{sH}$ crosses over from a Gaussian distribution in the metallic regime to a non-Gaussian distribution in the insulating regime as the disorder strength is increased.
dc.descriptionto be published in Phys. Rev. Lett., 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0608240
dc.identifierhttp://arxiv.org/abs/cond-mat/0608240
dc.identifierPhys. Rev. Lett 97, 066603 (2006).
dc.identifierdoi:10.1103/PhysRevLett.97.066603
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/114691
dc.subjectMesoscale and Nanoscale Physics
dc.titleUniversal spin-Hall conductance fluctuations in two dimensions
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