Orbital-assisted metal-insulator transition in VO$_{2}$
| dc.creator | Haverkort, M. W. | |
| dc.creator | Hu, Z. | |
| dc.creator | Tanaka, A. | |
| dc.creator | Reichelt, W. | |
| dc.creator | Streltsov, S. V. | |
| dc.creator | Korotin, M. A. | |
| dc.creator | Anisimov, V. I. | |
| dc.creator | Hsieh, H. H. | |
| dc.creator | Lin, H. -J. | |
| dc.creator | Chen, C. T. | |
| dc.creator | Khomskii, D. I. | |
| dc.creator | Tjeng, L. H. | |
| dc.date | 2005-09-14 | |
| dc.date.accessioned | 2026-07-07T06:25:35Z | |
| dc.date.available | 2026-07-07T06:25:35Z | |
| dc.description | We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO$_{2}$. We have used soft-x-ray absorption spectroscopy at the V $L_{2,3}$ edges as a sensitive local probe, and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective band widths are reduced, that the system becomes more 1-dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime. | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0509368 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0509368 | |
| dc.identifier | Phys. Rev. Lett. 95, 196404 (2005) | |
| dc.identifier | doi:10.1103/PhysRevLett.95.196404 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/96868 | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | Orbital-assisted metal-insulator transition in VO$_{2}$ | |
| dc.type | text |