High Kondo temperature (TK ~ 80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

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dc.creatorShibata, K.
dc.creatorHirakawa, K.
dc.date2008-08-19
dc.date.accessioned2026-07-07T09:57:19Z
dc.date.available2026-07-07T09:57:19Z
dc.descriptionWe have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, a clear Kondo effect was observed when strong coupling between the electrodes and the QDs was realized using a large QD with a diameter of ~ 100 nm. From the temperature dependence of the linear conductance at the Kondo valley, the Kondo temperature TK was determined to be ~ 81 K. This is the highest TK ever reported for artificial quantum nanostructures.
dc.description3 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0808.2535
dc.identifierhttp://arxiv.org/abs/0808.2535
dc.identifierAppl. Phys. Lett. 93, 062101 (2008)
dc.identifierdoi:10.1063/1.2968206
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/167299
dc.subjectMesoscale and Nanoscale Physics
dc.titleHigh Kondo temperature (TK ~ 80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes
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