Thickness-dependence of the electronic properties in V2O3 thin films

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dc.creatorGrygiel, C.
dc.creatorSimon, Ch.
dc.creatorMercey, B.
dc.creatorPrellier, W.
dc.creatorLimelette, P.
dc.creatorFresard, R.
dc.date2007-09-05
dc.date.accessioned2026-07-07T08:52:29Z
dc.date.available2026-07-07T08:52:29Z
dc.descriptionHigh quality vanadium sesquioxide V2O3 films (170-1100 Å) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties were examined. X-ray diffraction indicates that there is an in-plane compressive lattice parameter (a), close to -3.5% with respect to the substrate and an out-of-plane tensile lattice parameter (c) . The thin film samples display metallic character between 2-300 K, and no metal-to-insulator transition is observed. At low temperature, the V2O3 films behave as a strongly correlated metal, and the resistivity (ρ) follows the equation ρ=ρ_0 + A T^2, where A is the transport coefficient in a Fermi liquid. Typical values of A have been calculated to be 0.14 μΩcm K^{-2}, which is in agreement with the coefficient reported for V2O3 single crystals under high pressure. Moreover, a strong temperature-dependence of the Hall resistance confirms the electronic correlations of these V2O3 thin films samples.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0709.0692
dc.identifierhttp://arxiv.org/abs/0709.0692
dc.identifierApplied Physics Letters 91, 262103 (2007)
dc.identifierdoi:10.1063/1.2824465
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/145295
dc.subjectStrongly Correlated Electrons
dc.subjectMaterials Science
dc.titleThickness-dependence of the electronic properties in V2O3 thin films
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