Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors

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dc.creatorPu, Yong
dc.creatorChiba, Daichi
dc.creatorMatsukura, Fumihiro
dc.creatorOhno, Hideo
dc.creatorShi, Jing
dc.date2008-07-30
dc.date2008-09-12
dc.date.accessioned2026-07-07T10:02:09Z
dc.date.available2026-07-07T10:02:09Z
dc.descriptionThe Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.
dc.identifierhttps://arxiv.org/abs/0807.4942
dc.identifierhttp://arxiv.org/abs/0807.4942
dc.identifierdoi:10.1103/PhysRevLett.101.117208
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/168872
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleMott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors
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