Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

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dc.creatorChen, J. H.
dc.creatorJang, C.
dc.creatorXiao, S.
dc.creatorIshigami, M.
dc.creatorFuhrer, M. S.
dc.date2007-11-23
dc.date2007-12-05
dc.date.accessioned2026-07-07T09:31:54Z
dc.date.available2026-07-07T09:31:54Z
dc.descriptionThe linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that acoustic phonon scattering[4-6] is indeed independent of n, and places an intrinsic limit on the resistivity in graphene of only 30 Ohm at room temperature (RT). At a technologically-relevant carrier density of 10^12 cm^-2, the mean free path for electron-acoustic phonon scattering is >2 microns, and the intrinsic mobility limit is 2x10^5 cm^2/Vs, exceeding the highest known inorganic semiconductor (InSb, ~7.7x10^4 cm^2/Vs[9]) and semiconducting carbon nanotubes (~1x10^5 cm^2/Vs[10]). We also show that extrinsic scattering by surface phonons of the SiO2 substrate[11,12] adds a strong temperature dependent resistivity above ~200 K[8], limiting the RT mobility to ~4x10^4 cm^2/Vs, pointing out the importance of substrate choice for graphene devices[13].
dc.description16 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0711.3646
dc.identifierhttp://arxiv.org/abs/0711.3646
dc.identifierNature Nanotechnology 3, 206 - 209 (2008)
dc.identifierdoi:10.1038/nnano.2008.58
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/158626
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleIntrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
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